Contact over active gate structure

ABSTRACT

Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts through the selective deposition of a fill material.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to U.S. Provisional Application No.62/725,366, filed Aug. 31, 2018, the entire disclosure of which ishereby incorporated by reference herein.

TECHNICAL FIELD

Embodiments of the present invention pertain to the field of electronicdevice manufacturing and methods for device patterning. In particular,embodiments pertain to the use of selective deposition in contact overactive gate applications.

BACKGROUND

Reducing the size of integrated circuits (ICs) results in improvedperformance, increased capacity, and/or reduced cost. Each sizereduction requires more sophisticated techniques to form the ICs.Shrinking transistor size, for example, allows for the incorporation ofan increased number of memory or logic devices on a chip, lending to thefabrication of products with increased capacity. The drive for ever-morecapacity, however, is not without issue. The necessity to optimize theperformance of each device becomes increasingly significant.

In the manufacture of ICs, multi-gate transistors have become moreprevalent as device dimensions continue to scale down. Scalingmulti-gate transistors has not been without consequence, however. As thedimensions of these fundamental building blocks of microelectroniccircuitry are reduced, and as the number of building blocks fabricatedin a given region increases, the constraints on the lithographicprocesses used to pattern these building blocks becomes overwhelming.

Photolithography is commonly used to pattern ICs on a substrate. Anexemplary feature of an IC is a line of a material which may be a metal,semiconductor, or insulator. Due to factors such as optics and light orradiation wavelength, however, photolithography techniques arerestricted by a minimum pitch, below which a particularphotolithographic technique may not reliably form features. Thus, theminimum pitch of a photolithographic technique can limit feature sizereduction of ICs.

Processes such as self-aligned double patterning (SADP), self-alignedquadruple patterning (SAQP), and litho-etch-litho-etch (LELE) may beused for extending the capabilities of photolithographic techniquesbeyond the minimum pitch capabilities of existing lithographicequipment. Following the SADP, SAQP, or LELE process, multi-cut or blockmasks are placed over the lines and spaces generated by SADP, SAQP, orLELE processes to perform device patterning. As the feature sizedecreases, pitch and linewidth also decrease. Therefore the precision ofmask edge placement control must be higher. Equipment capable of meetingsuch tight geometric requirements are extremely expensive, andadditionally, such tight geometric requirements also contribute to lowproduction yields.

Therefore, there is a need for improved methods for device patterning toreduce defects from pattern misalignment and increase production yields.

SUMMARY

One or more embodiments of the disclosure are directed to methods offorming a contact. In one embodiment, a method of forming a contactcomprises forming at least one gate stack over an active region on asubstrate. The at least one gate stack has a first side and a secondside and comprises a gate and a gate cap comprising a first material.The substrate has a spacer material adjacent the first side and thesecond side of the at least one gate stack, a source material with asource cap comprising a second material on an opposite side of thespacer material adjacent the first side of the at least one gate stack,and a drain material with a drain cap comprising the second material onan opposite side of the spacer material adjacent the second side of theat least one gate stack. An interlayer dielectric (ILD) comprising thesecond material is formed on the gate cap, spacer material, source cap,and drain cap. A first mask layer is formed on the interlayer dielectric(ILD). The interlayer dielectric (ILD) and the first mask layer have atleast one opening exposing one or more of a surface of the gate cap, asurface of the spacer material, a surface of the source material, or asurface of the drain material. The gate cap is removed to expose asurface of the gate. A gate contact is formed on one of the surface ofthe gate, the surface of the source material, or the surface of thedrain material. A source/drain contact is formed on one or more of thesurface of the gate material, the surface of the drain material, thesurface of the spacer material, or the surface of the gate cap.

In one embodiment, a method of forming a contact comprises forming atleast one gate stack over an active region on a substrate, the at leastone gate stack having a first side and a second side and comprising agate and a gate cap comprising a first material, the substrate having aspacer material adjacent the first side and the second side of the atleast one gate stack, a source material with a source cap comprising asecond material on an opposite side of the spacer material adjacent thefirst side of the at least one gate stack, a drain material with a draincap comprising the second material on an opposite side of the spacermaterial adjacent the second side of the at least one gate stack. Aninterlayer dielectric (ILD) comprising the second material is formed onthe gate cap, spacer material, source cap, and drain cap. A first masklayer is formed on the interlayer dielectric (ILD), the interlayerdielectric (ILD) and the first mask layer have at least one opening. Oneof the source cap or the drain cap is selectively etched through the atleast one opening to expose a surface of the gate cap and a surface ofthe spacer material, and to expose one of a surface of the sourcematerial or a surface of the drain material. A fill material isselectively deposited on one of the exposed surface of the sourcematerial or the exposed surface of the drain material. The gate cap isremoved to expose a surface of the gate. A gate contact is formed on thesurface of the gate.

One or more embodiments of the present disclosure are directed to anelectronic device. In one embodiment, an electronic device comprises asubstrate having an active region with at least one gate stack formedthereon, the at least one gate stack having a first side and a secondside and comprising a gate and a gate cap comprising a first material. Aspacer material is on the substrate adjacent the first side and secondside of the at least one gate stack. A source material with a source capcomprising a second material, the source material and source cap areadjacent one of the first side or second side of the at least one gatestack opposite the spacer material. A drain material with a drain capcomprising the second material, the drain material and the drain cap areadjacent the other of the first side or the second side of the at leastone gate stack opposite the spacer material. A fill material is on thedrain material or on the source material, the fill material having a topsurface substantially coplanar with one or more of a top surface of thespacer material, a top surface of the drain cap, or a top surface of thesource cap. An interlayer dielectric (ILD) is on one or more of thespacer material, the gate cap, the drain cap, or the source cap.Optionally, a first mask layer is on the interlayer dielectric (ILD).

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments. The embodiments as described herein areillustrated by way of example and not limitation in the figures of theaccompanying drawings in which like references indicate similarelements.

FIG. 1A illustrates a cross-sectional view of a contact over active gatestructure according to one or more embodiments of the disclosure;

FIG. 1B illustrates a cross-sectional view of a contact over active gatestructure according to one or more embodiments of the disclosure;

FIG. 1C illustrates a cross-sectional view of a contact over active gatestructure according to one or more embodiments of the disclosure;

FIG. 1D illustrates a cross-sectional view of a contact over active gatestructure according to one or more embodiments of the disclosure;

FIG. 1E illustrates a cross-sectional view of a contact over active gatestructure according to one or more embodiments of the disclosure;

FIG. 1F illustrates a cross-sectional view of a contact over active gatestructure according to one or more embodiments of the disclosure;

FIG. 1G illustrates a cross-sectional view of a contact over active gatestructure according to one or more embodiments of the disclosure;

FIG. 1H illustrates a cross-sectional view of a contact over active gatestructure according to one or more embodiments of the disclosure;

FIG. 2 is a block diagram of a process chamber in accordance with one ormore embodiment of the disclosure; and

FIG. 3 is a block diagram of a cluster tool system in accordance withone or more embodiment of the disclosure.

DETAILED DESCRIPTION

Before describing several exemplary embodiments of the disclosure, it isto be understood that the disclosure is not limited to the details ofconstruction or process steps set forth in the following description.The disclosure is capable of other embodiments and of being practiced orbeing carried out in various ways.

A “substrate” as used herein, refers to any substrate or materialsurface formed on a substrate upon which film processing is performedduring a fabrication process. For example, a substrate surface on whichprocessing can be performed include materials such as silicon, siliconoxide, strained silicon, silicon on insulator (SOI), carbon dopedsilicon oxides, amorphous silicon, doped silicon, germanium, galliumarsenide, glass, sapphire, and any other materials such as metals, metalnitrides, metal alloys, and other conductive materials, depending on theapplication. Substrates include, without limitation, semiconductorwafers. Substrates may be exposed to a pretreatment process to polish,etch, reduce, oxidize, hydroxylate, anneal and/or bake the substratesurface. In addition to film processing directly on the surface of thesubstrate itself, in the present disclosure, any of the film processingsteps disclosed may also be performed on an under-layer formed on thesubstrate as disclosed in more detail below, and the term “substratesurface” is intended to include such under-layer as the contextindicates. Thus for example, where a film/layer or partial film/layerhas been deposited onto a substrate surface, the exposed surface of thenewly deposited film/layer becomes the substrate surface.

As used in this specification and the appended claims, the terms“precursor”, “reactant”, “reactive gas” and the like are usedinterchangeably to refer to any gaseous species that can react with thesubstrate surface.

As used in this specification and the appended claims, the term“linewidth” refers to the width of the line of a material which may be ametal, semiconductor, or insulator, and the term “spacing” refers to thedistance between adjacent lines. As used in this specification and theappended claims, the term “pitch” is defined as the distance between asame point on two adjacent lines. The pitch is equal to the sum of thelinewidth and the spacing.

One or more embodiments of the present disclosure are directed tosemiconductor structures or devices having one or more gate contactstructures (e.g. gate contact vias) disposed over active portions ofgate electrodes of the semiconductor structures or devices.

Transistors are circuit components or elements that are often formed onsemiconductor devices. Many transistors may be formed on a semiconductordevice in addition to capacitors, inductors, resistors, diodes,conductive lines, or other elements, depending upon the circuit design.The metal-oxide-semiconductor field-effect transistor (MOSFET) is a typeof field-effect transistor (FET). It has an insulated gate, whosevoltage determines the conductivity of the device. This ability tochange conductivity with the amount of applied voltage is used foramplifying or switching electronic signals.

Generally, a transistor includes a gate stack formed between source anddrain regions. The source and drain regions may include a doped regionof a substrate and may exhibit a doping profile suitable for aparticular application. The gate stack is positioned over the channelregion and may include a gate dielectric interposed between a gateelectrode and the channel region in the substrate.

As used herein, the term “field effect transistor” or “FET” refers to atransistor that uses an electric field to control the electricalbehavior of the device. Field effect transistors generally display veryhigh input impedance at low temperatures. The conductivity between thedrain and source terminals is controlled by an electric field in thedevice, which is generated by a voltage difference between the body andthe gate of the device.

As used in this specification and the appended claims, the term COAG“contact over active gate” or “COAG” refers to a process feature wherebythe gate contact is stacked on top of the gate where there is an activeregion underneath, thereby improving transistor density. COAG is afeature that provides an additional 10% area scaling.

A COAG semiconductor structure or device includes a diffusion or activeregion disposed in a substrate, and within an isolation region. One ormore gate lines (also known as polylines) are disposed over thediffusion or active region as well as over a portion of the isolationregion. Source or drain contacts are disposed over source and drainregions of the semiconductor device. Source or drain contact viasprovide contact to source or drain contacts. A separate gate contact,and overlying gate contact via, provides contact to a gate line.

Typically, in the fabrication of COAG structures, at least a four-colorhardmask scheme is necessary, creating challenges for integration,material, and etching. As used herein, the term “four-color” refers tofour different materials which are selectively etchable relative to eachother. The more colors required, the more complex/difficult integrationbecomes.

Some embodiments of the disclosure advantageously provide methods toenable self-aligned contact over active gate (COAG) using a three-colorprocessing scheme. The three-color processing scheme of one or moreembodiments advantageously minimizes usage of selective-depositionmaterials, leading to minimal impact on performance and minimal flowchange compared to a process that uses a four color COAG. In someembodiments, no source/drain cap hardmask is need, resulting in fewerprocess steps.

The embodiments of the disclosure are described by way of the Figures,which illustrate processes for forming contacts in accordance with oneor more embodiments of the disclosure as exemplary process flows using athree-color (ABC) etch process. The term “three-color” refers to threedifferent materials which are selectively etchable relative to eachother. In other words, one material will be etched, while the other twomaterials will not be etched. The processes shown are merelyillustrative possible uses for the disclosed processes, and the skilledartisan will recognize that the disclosed processes are not limited tothe illustrated applications.

As used herein, the term “active region” refers to a region whichcomprises active areas that play an active role in the functioning of asemiconductor device. For example, in a semiconductor substrate havingformed thereon a field effect transistor (FET), an active regiontypically refers to a substrate area having formed thereon varioussub-features of the field effect transistor, including, e.g., a source,a drain, and a channel connecting the source and the drain. A gate stackis located over the active region and typically covers a portionthereof. The gate stack may, for example, cover at least a portion ofthe channel in a field effect transistor. A gate dielectric is typicallylocated between a gate electrode and the active region and prevents adirect electrical contact there-between. A spacer material is typicallyan electrically insulating material which shields the gate electrodefrom electrical contact along the lateral sides.

As used herein, when a first material is said to be etched selectivelywith respect to a second material, this means that the first material isetched faster than the second material. For example, the etching processwould etch the first material at least two times faster, or at leastfive times faster, or at least ten times faster, than the secondmaterial.

In one or more embodiments, the contacts formed are self-aligned. Asused herein, the term “self-aligned contact” refers to a kind ofself-aligned via. If the via (contact) patterning has a patternplacement error, the bottom of via still determined by the top surfaceof the bottom metal.

One or more embodiments of the disclosure advantageously providethree-color hardmask processes for forming contacts. FIGS. 1A-1Hillustrate an electronic device 100 formed according to the method ofone or more embodiments of the disclosure. The electronic device 100 canbe referred to as a metal gate, a transistor, a transistor gate, and thelike. The electronic device 100 has a substrate 102 with at least onegate stack 104 formed thereon. The at least one gate stack 104 has afirst side 106 and a second side 108 on opposite sides of the at leastone gate stack 104. The at least one gate stack 104 comprises a gate 110and a gate cap 112 formed on the top surface 114 of the gate 110.

The at least one gate cap 112 comprises a first material. The substrate102 has a spacer material 116 adjacent the first side 106 and the secondside 108 of the at least one gate stack 104, a source material 118 awith a source cap 120 a comprising a second material on an opposite sideof the spacer material 116 adjacent the first side 106 of the at leastone gate stack 104, a drain material 118 b with a drain cap 120 bcomprising the second material on an opposite side of the spacermaterial 116 adjacent the second side 108 of the at least one gate stack104. An interlayer dielectric (ILD) 122 (also referred to as a pre-metaldielectric (PMD)) comprising the second material is formed on the gatecap 112, spacer material 116, source cap 120 a, and drain cap 120 b, anda first mask layer 124 is formed on the interlayer dielectric (ILD) 122,the interlayer dielectric (ILD) 122 and the first mask layer 124 havingan opening 126 exposing one or more of a surface of the gate cap 112, asurface of the spacer material 116, a surface of the source material 118a, or a surface of the drain material 118 b. According to the method ofone or more embodiments, the gate cap 112 is optionally removed toexpose a surface of the gate 110. A contact is then formed on one of thesurface of the gate 110, the surface of the source material 118 a, orthe surface of the drain material 118 b.

With reference to FIG. 1A, an electronic device 100 comprises at leastone gate stack 104 over an active region on a substrate 102 inaccordance with one or more embodiments. The at least one gate stack 104has a substrate 102 with a gate 110 formed thereon. The gate 110 has afirst side 106 and a second side 108 on opposite sides of the gate 110.A gate cap 112 is formed on the top surface 114 of the gate 110.

The substrate 102 can be any suitable substrate material. In one or moreembodiments, the substrate 102 comprises a semiconductor material, e.g.,silicon (Si), carbon (C), germanium (Ge), silicon germanium (SiGe),gallium arsenide (GaAs), indium phosphorus (InP), indium galliumarsenide (InGaAs), indium aluminum arsenide (InAlAs), othersemiconductor materials, or any combination thereof. In someembodiments, substrate 102 is a semiconductor-on-isolator (SOI)substrate including a bulk lower substrate, a middle insulation layer,and a top monocrystalline layer. The top monocrystalline layer maycomprise any material listed above, e.g., silicon (Si). In variousembodiments, the substrate 102 can be, e.g., an organic, a ceramic, aglass, or a semiconductor substrate. Although a few examples ofmaterials from which the substrate may be formed are described herein,any material that may serve as a foundation upon which passive andactive electronic devices (e.g., transistors, memories, capacitors,inductors, resistors, switches, integrated circuits, amplifiers,optoelectronic devices, or any other electronic devices) may be builtfalls within the spirit and scope of the present invention.

A spacer material 116 is formed adjacent the first side 106 and thesecond side 108 of the gate 110 and gate cap 112. The spacer material116 on either side of the gate 110 can be the same material or differentmaterials. The spacer material 116 adjacent the first side 106 of the atleast one gate stack 104 can be referred to as the first spacer material116 and the spacer material 116 adjacent the second side 108 of at leastone gate stack 104 can be referred to as the second spacer material 116.The first spacer material 116 and the second spacer material 116 can bethe same material or can be different materials. In one or moreembodiments, the first spacer material 116 and the second spacermaterial 116 are the same material.

A source material 118 a with a source cap 120 a is formed on the firstside 106 of the at least one gate stack 104 opposite the first spacermaterial 116 and a drain material 118 b with a drain cap 120 b is formedon the second side 108 of the at least one gate stack 104 opposite thesecond spacer material 116. While it is noted that in this disclosure,the reference numeral 118 a refers to the source material and thereference numeral 118 b refers to the drain material, as recognized byone skilled in the art, the positioning of the source and drainmaterials can be switched such that 118 a is the drain material and 118b is the source material. Likewise, while, in this disclosure, thereference numeral 120 a refers to the source cap and the referencenumeral 120 b refers to the drain cap, as recognized by one skilled inthe art, the positioning of the source and drain caps can be switchedsuch that 120 a is the drain cap and 120 b is the source cap. Theindividual components of the electronic device 100, including the gate110, the gate cap 112, the spacer material 116, the source material 118a, the drain material 118 b, the source cap 120 a, and the drain cap 120b, can be formed by any suitable process or processes known to theskilled artisan.

The gate 110 can be made of any suitable material known to the skilledartisan. In one or more embodiments, the gate 110 comprises a metalselected from one or more of copper (Cu), cobalt (Co), tungsten (W),titanium (Ti), molybdenum (Mo), nickel (Ni), ruthenium (Ru), silver(Ag), gold (Au), iridium (Ir), or platinum (Pt). In one or more specificembodiments, the gate 110 comprises a metal selected from one or more ofcobalt (Co), tungsten (W), titanium (Ti), molybdenum (Mo), nickel (Ni),ruthenium (Ru), silver (Ag), iridium (Ir), or platinum (Pt). In otherspecific embodiments, the gate 110 comprises a metal selected from oneor more of cobalt (Co), tungsten (W), titanium (Ti), molybdenum (Mo), orruthenium (Ru).

The gate cap 112 can be made of any suitable material known to the skillartisan. In one or more embodiments, the gate cap 112 comprises a firstmaterial. The first material may comprise one or more of tungsten oxide(WO), silicon carbide (SiC), tungsten carbide (WC), silicon nitride(SiN), aluminum oxide (AlO), zirconium oxide (ZrO), and the like. In oneor more specific embodiments, the first material may comprise one ormore of tungsten oxide (WO), silicon carbide (SiC), tungsten carbide(WC), and the like. In one or more embodiments, the gate cap 112comprising the first materials is a different material than thesource/drain cap 120 a/120 b and the interlayer dielectric (ILD) 122.

The spacer material 116 of some embodiments comprises a low-K dielectricmaterial. In some embodiments, the low-K dielectric material is selectedfrom silicon carbonitride (SiCN), silicon oxycarbide (SiOC), or siliconoxycarbonitride (SiONC).

The source material 118 a and drain material 118 b can be any suitablematerial known to the skilled artisan. In one or more embodiments, thesource/drain material 118 a/118 b comprise one or more of copper (Cu),cobalt (Co), tungsten (W), titanium (Ti), molybdenum (Mo), nickel (Ni),ruthenium (Ru), silver (Ag), gold (Au), iridium (Ir), or platinum (Pt).In one or more specific embodiments, the source/drain material 118 a/118b comprise one or more of cobalt (Co), tungsten (W), titanium (Ti),molybdenum (Mo), nickel (Ni), ruthenium (Ru), silver (Ag), iridium (Ir),or platinum (Pt). In other specific embodiments, the source/drainmaterial 118 a/118 b comprises one or more of cobalt (Co), tungsten (W),titanium (Ti), molybdenum (Mo), or ruthenium (Ru).

The source cap 120 a and drain cap 120 b can be any suitable materialknown to the skilled artisan. In one or more embodiments, the source cap120 a and the drain cap 120 b comprise a second material. In someembodiments, the second material comprises a dielectric. In specificembodiments, the second material comprises one or more of siliconnitride (SiN), silicon oxynitride (SiO_(x)N_(y)), or silicon oxide(SiO). While the term “silicon oxide” may be used to describe the secondmaterial, the skilled artisan will recognize that the disclosure is notrestricted to a particular stoichiometry. For example, the terms“silicon oxide” and “silicon dioxide” may both be used to describe amaterial having silicon and oxygen atoms in any suitable stoichiometricratio. The same is true for the other materials listed in thisdisclosure, e.g. silicon nitride, silicon oxynitride, aluminum oxide,zirconium oxide, and the like.

With reference to FIG. 1B, in one or more embodiments, an interlayerdielectric (ILD) 122 is formed on a top surface of the gate cap 112, atop surface of the spacer material 116, a top surface of the source cap120 a, and on a top surface of the drain cap 120 b. The interlayerdielectric (ILD) 122 can be any suitable material known to the skilledartisan. The interlayer dielectric (ILD) 122 can be deposited using oneor more deposition techniques known to one of ordinary skill in the artof microelectronic device manufacturing. In one or more embodiments,interlayer dielectric (ILD) 122 is deposited using one of depositiontechniques, such as, but not limited to, ALD, CVD, PVD, MBE, MOCVD,spin-on, or other insulating layer deposition techniques known to theskilled artisan. In one or more embodiments, interlayer dielectric (ILD)122 is an oxide, e.g. silicon oxide.

In one or more embodiments, the interlayer dielectric (ILD) 122comprises the second material. In other words, in one or moreembodiments, the source cap 120 a, the drain cap 120 b, and theinterlayer dielectric (ILD) 122 comprise the same material, the secondmaterial. In some embodiments, the second material comprises anydielectric know to one of skill in the art. In specific embodiments, thesecond material comprises one or more of silicon nitride (SiN), siliconoxynitride (SiO_(x)N_(y)), silicon oxide (SiO), and the like.

Referring to FIG. 1C, a first mask layer 124 is then formed on theinterlayer dielectric (ILD) 122. The first mask layer 124 can be anysuitable material known to the skilled artisan. The first mask layer 124can be deposited using one or more mask layer deposition techniquesknown to one of ordinary skill in the art of microelectronic devicemanufacturing. In one or more embodiments, the first mask layer 124 isdeposited using one of deposition techniques, such as, but not limitedto, ALD, CVD, PVD, MBE, MOCVD, spin-on, or other insulating layerdeposition techniques known to the skilled artisan. In one or moreembodiments, the first mask layer 124 comprises a third materialselected from one or more of spin-on carbon, hardmask, or a photoresist.In one or more embodiments, the third material comprises an organicplanarization material, e.g. titanium nitride (TiN), and the like.

As illustrated in FIGS. 1C and 1D, in one or more embodiments, theinterlayer dielectric (ILD) 122 and the first mask layer 124 have anopening 126 and an opening 127 exposing one or more of a surface of thegate cap 112, a surface of the spacer material 116, a surface of thesource material 118 a, or a surface of the drain material 118 b.

In one or more embodiments, the opening 126 is formed using one or moreof the patterning and etching techniques known to one of ordinary skillin the art of microelectronic device manufacturing. Referring to FIG.1D, in some embodiments, exposing the surface of the source material 118a comprises selectively etching the source cap 120 a. In someembodiments, exposing the surface of the drain material 118 b comprisesselectively etching the drain cap 120 b. In one or more embodiments,exposing one of the surface of the source material 118 a or the surfaceof the drain material 118 b comprises selectively etching one of thesource cap 120 a or the drain cap 120 b through the opening 126. Theelectronic device 100 illustrated in FIG. 1D is a three-color gatestack, the second material (from the interlayer dielectric (ILD) 122 andthe source/drain cap 120 a/120 b), the gate cap 112, and the spacermaterial 116.

In the embodiment illustrated in FIG. 1D, one of the source cap 120 a orthe drain cap 120 b has been removed by a selective etch process toexpose one of the surface of the source material 118 a or the surface ofthe drain material 118 b forming a gap 128. In some embodiments,substantially all of the source/drain material 118 a/118 b remains afteretching the source/drain cap 120 a/120 b. As used in this manner, theterm “substantially all” means that greater than or equal to about 80%,or 85% or 90% or 95% of the source/drain material 118 a/118 b remains,based on the initial thickness of the source/drain material 118 a/118 b.

As illustrated in FIGS. 1C and 1D, in one or more embodiments, theinterlayer dielectric (ILD) 122 and the first mask layer 124 have anopening 127 exposing a surface of the gate cap 112 and a surface of thespacer material 116, and exposing one of a surface of the sourcematerial 118 a or a surface of the drain material 118 b. In one or moreembodiments, the opening 127 is formed using one or more of thepatterning and etching techniques known to one of ordinary skill in theart of microelectronic device manufacturing.

Referring to FIG. 1D, in some embodiments, exposing the surface of thesource material 118 a comprises selectively etching the source cap 120a. In some embodiments, exposing the surface of the drain material 118 bcomprises selectively etching the drain cap 120 b. In one or moreembodiments, exposing one of the surface of the source material 118 a orthe surface of the drain material 118 b comprises selectively etchingone of the source cap 120 a or the drain cap 120 b through the opening127.

With reference to FIG. 1E, in one or more embodiments a fill material130 is selectively deposited into the gap 127 and onto the exposedsurface of one of the source material 118 a or the drain material 118 b.The fill material 130 can be any suitable material known to the skilledartisan. In one or more embodiments, the fill material 130 is selectedfrom one or more of hafnium oxide (HfO), zirconium oxide (ZrO), aluminumoxide (AlO), silicon oxide (SiO), silicon nitride (SiN), or the like.

In some embodiments, a fill material 130 is deposited on a surface ofthe drain material 118 b. It is noted that FIG. 1E depicts thedeposition of the fill material 130 on an exposed surface of the drainmaterial 118 b. However, as recognized by one of skill in the art, thefill material 130 can be deposited on the exposed surface of the sourcematerial 118 a, depending upon the configuration of the at least onegate stack 104 with respect to the gate 110 and the gate cap 112. Insome embodiments, a fill material 130 is deposited on an exposed surfaceof the source material 118 a.

As used herein, the term “selective deposition” refers to a processwhereby materials (e.g. the fill material 130) is deposited in an exactplace. In selective deposition, deposition techniques known to those ofskill in the art (e.g. atomic layer deposition (ALD), chemical vapordeposition (CVD), and the like) are used to selectively depositinorganic materials. While there are multiple materials present on thesubstrate 102, the fill material 130 is only deposited on the exposedsurface of the source/drain material 118 a/118 b. As used herein, theterm “selective” means that deposition of the fill material 130 on theexposed surface of the source/drain material 118 a/118 b occurs insteadof deposition on the exposed surface of the spacer 116 or on the exposedsurface of the gate cap 112 in a ratio greater than or equal to about5:1, 10:1, 15:1, 20:1, 25:1, 30:1, 35:1, 40:1, 45:1, 50:1. 100:1, 200:1,300:1, 400:1, 500:1, 1000:1, or more.

Referring to FIG. 1F, after selective deposition of the fill material130 on one of the exposed surface of the source/drain material 118 a/118b, the substrate 102 is etched and the gate cap 112 is removed exposinga top surface 132 of the gate 110. The electronic device 100 illustratedin FIG. 1F is a three-color gate stack, the spacer material 116, thegate material 110, and the fill material 130.

In the embodiment illustrated in FIG. 1F, the gate cap 112 has beenremoved by a selective etch process to expose the top surface 132 of thegate 110 forming a gap 134. In some embodiments, substantially all ofthe fill material 130 remains after etching the gate cap 112. As used inthis manner, the term “substantially all” means that greater than orequal to about 80%, or 85% or 90% or 95% of the fill material 130remains, based on the initial thickness of the fill material 130. In oneor more embodiments, the first mask layer 124 may be removed by anymethod known to one of skill in the art including, but not limited to,planarization. Thus, in one or more embodiments, the first mask layer124 may be absent.

With reference to FIG. 1G, a gate contact 136 is formed on one of thesurface of the gate 110, the surface of the source material 118 a, orthe surface of the drain material 118 b. The gate contact 136 can be anysuitable material known to the skilled artisan. In one or moreembodiments, the gate contact 136 is selected from one or more of copper(Cu), cobalt (Co), tungsten (W), titanium (Ti), molybdenum (Mo), nickel(Ni), ruthenium (Ru), silver (Ag), gold (Au), iridium (Ir), tantalum(Ta), or platinum (Pt). In one or more specific embodiments, the gatecontact 136 comprises one or more of cobalt (Co), tungsten (W), titanium(Ti), molybdenum (Mo), nickel (Ni), ruthenium (Ru), silver (Ag), iridium(Ir), tantalum (Ta), or platinum (Pt). In other specific embodiments,the gate contact 136 comprises one or more of cobalt (Co), tungsten (W),titanium (Ti), tantalum (Ta), molybdenum (Mo), or ruthenium (Ru). In oneor more embodiments, the first mask layer 124 may be removed by anymethod known to one of skill in the art including, but not limited to,planarization. Thus, in one or more embodiments, the first mask layer124 may be absent.

With reference to FIG. 1G, a source/drain contact 138 is formed on oneof the surface of the gate cap 112, the surface of the source material118 a, or the surface of the drain material 118 b. The source/draincontact 138 can be any suitable material known to the skilled artisan.In one or more embodiments, the source/drain contact 138 is selectedfrom one or more of copper (Cu), cobalt (Co), tungsten (W), titanium(Ti), molybdenum (Mo), nickel (Ni), ruthenium (Ru), silver (Ag), gold(Au), iridium (Ir), tantalum (Ta), or platinum (Pt). In one or morespecific embodiments, the source/drain contact 138 comprises one or moreof cobalt (Co), tungsten (W), titanium (Ti), molybdenum (Mo), nickel(Ni), ruthenium (Ru), silver (Ag), iridium (Ir), tantalum (Ta), orplatinum (Pt). In other specific embodiments, the source/drain contact138 comprises one or more of cobalt (Co), tungsten (W), titanium (Ti),tantalum (Ta), molybdenum (Mo), or ruthenium (Ru). In one or moreembodiments, the first mask layer 124 may be removed by any method knownto one of skill in the art including, but not limited to, planarization.Thus, in one or more embodiments, the first mask layer 124 may beabsent. In one or more embodiments, the gate contact 136 and thesource/drain contact 138 comprise the same material.

With reference to FIG. 1H, the first mask layer 124 may be removed suchthat gate contact 136 is coplanar with the interlayer dielectric (ILD)122. In some embodiments, the first mask layer 124 is removed prior toforming/depositing contact 136. The first mask layer 124 may be removedby any method known to one of skill in the art, including, but notlimited to, planarization.

With reference to FIG. 1H, the first mask layer 124 may be removed suchthat the source/drain contact 138 is coplanar with the interlayerdielectric (ILD) 222. In some embodiments, the first mask layer 124 isremoved prior to forming/depositing the source/drain contact 138. Thefirst mask layer 124 may be removed by any method known to one of skillin the art, including, but not limited to, planarization.

One or more embodiments of the disclosure are directed to a method offorming a contact. In an embodiment, the method comprises forming atleast one gate stack over an active region on a substrate, the at leastone gate stack having a first side and a second side and comprising agate and a gate cap on the top surface of the gate. The gate capcomprising a first material. The substrate has a spacer materialadjacent the first side and the second side of the at least one gatestack, a source material with a source cap comprising a second materialon an opposite side of the spacer material adjacent the first side ofthe at least one gate stack, a drain material with a drain capcomprising the second material on an opposite side of the spacermaterial adjacent the second side of the at least one gate stack. Aninterlayer dielectric (ILD) comprising the second material is formed onthe gate cap, spacer material, source cap, and drain cap. A first masklayer is formed on the interlayer dielectric (ILD), the interlayerdielectric (ILD) and the first mask layer having at least one opening.One of the source cap or the drain cap is selectively etched through theat least one opening to expose a surface of the gate cap and a surfaceof the spacer material, and to expose one of a surface of the sourcematerial or a surface of the drain material. A fill material isselectively deposited on one of the exposed surface of the sourcematerial or the exposed surface of the drain material. The gate cap isremoved to expose a surface of the gate, and a gate contact is formed onthe surface of the gate.

One or more embodiments are directed to an electronic device. Withreference to FIG. 1E, in one or more embodiments, an electronic device100 comprises a substrate 102 having an active region with at least onegate stack 104 formed thereon, the at least one gate stack 104 having afirst side 106 and a second side 108 and comprising a gate 110 and agate cap 112 comprising a first material. A spacer material 116 is onthe substrate 102 adjacent the first side 106 and second side 108 of theat least one gate stack 104. A source material 118 a with a source cap120 a comprising a second material, the source material 118 a and thesource cap 120 a adjacent one of the first side 106 or second side 108of the at least one gate stack 104 opposite the spacer material 116. Adrain material 118 b with a drain cap 120 b comprising the secondmaterial, the drain material 118 b and the drain cap 120 b adjacent theother of the first side 106 or the second side 108 of the at least onegate stack 104 opposite the spacer material 116. A fill material 130 ison the drain material 118 b (or the source material 118 a). The fillmaterial 130 has a top surface substantially coplanar with one or moreof a top surface of the spacer material 116, a top surface of the draincap 120 b, or a top surface of the source cap 120 a. An interlayerdielectric (ILD) 122 is on one or more of the spacer material, the gatecap, the drain cap, or the source cap, and, optionally, a first masklayer 124 is on the interlayer dielectric (ILD) 122.

With reference to FIG. 1F, in one or more embodiments, the electronicdevice 100 may further comprise at least one opening 132 in theinterlayer dielectric (ILD) 122 exposing a surface of one or more of thefill material 130, the spacer material 116, the gate material 110, orthe source/drain material 118 a/118 b.

With reference to FIG. 1G, the electronic device 100 may furthercomprise at least one of a gate contact 136 or a source/drain contact138 on one or more of the exposed surface of the fill material 130, thespacer material 116, the gate material 110, or the source/drain material118 a/118 b.

According to one or more embodiments, the substrate is subjected toprocessing prior to and/or after forming the contact. This processingcan be performed in the same chamber or in one or more separateprocessing chambers. In some embodiments, the substrate is moved fromthe first chamber to a separate, second chamber for further processing.The substrate can be moved directly from the first chamber to theseparate processing chamber, or the substrate can be moved from thefirst chamber to one or more transfer chambers, and then moved to theseparate processing chamber. Accordingly, the processing apparatus maycomprise multiple chambers in communication with a transfer station. Anapparatus of this sort may be referred to as a “cluster tool” or“clustered system”, and the like.

Generally, a cluster tool is a modular system comprising multiplechambers which perform various functions including substratecenter-finding and orientation, degassing, annealing, deposition and/oretching. According to one or more embodiments, a cluster tool includesat least a first chamber and a central transfer chamber. The centraltransfer chamber may house a robot that can shuttle substrates betweenand among processing chambers and load lock chambers. The transferchamber is typically maintained at a vacuum condition and provides anintermediate stage for shuttling substrates from one chamber to anotherand/or to a load lock chamber positioned at a front end of the clustertool. Two well-known cluster tools which may be adapted for the presentdisclosure are the Centura® and the Endura®, both available from AppliedMaterials, Inc., of Santa Clara, Calif. However, the exact arrangementand combination of chambers may be altered for purposes of performingspecific portions of a process as described herein. Other processingchambers which may be used include, but are not limited to, cyclicallayer deposition (CLD), atomic layer deposition (ALD), chemical vapordeposition (CVD), physical vapor deposition (PVD), etch, pre-clean,chemical clean, thermal treatment such as RTP, plasma nitridation,degas, orientation, hydroxylation and other substrate processes. Bycarrying out processes in a chamber on a cluster tool, surfacecontamination of the substrate with atmospheric impurities can beavoided without oxidation prior to depositing a subsequent film.

According to one or more embodiments, the substrate is continuouslyunder vacuum or “load lock” conditions, and is not exposed to ambientair when being moved from one chamber to the next. The transfer chambersare thus under vacuum and are “pumped down” under vacuum pressure. Inertgases may be present in the processing chambers or the transferchambers. In some embodiments, an inert gas is used as a purge gas toremove some or all of the reactants after forming the layer on thesurface of the substrate. According to one or more embodiments, a purgegas is injected at the exit of the deposition chamber to preventreactants from moving from the deposition chamber to the transferchamber and/or additional processing chamber. Thus, the flow of inertgas forms a curtain at the exit of the chamber.

During processing, the substrate can be heated or cooled. Such heatingor cooling can be accomplished by any suitable means including, but notlimited to, changing the temperature of the substrate support (e.g.,susceptor) and flowing heated or cooled gases to the substrate surface.In some embodiments, the substrate support includes a heater/coolerwhich can be controlled to change the substrate temperatureconductively. In one or more embodiments, the gases (either reactivegases or inert gases) being employed are heated or cooled to locallychange the substrate temperature. In some embodiments, a heater/cooleris positioned within the chamber adjacent the substrate surface toconvectively change the substrate temperature.

The substrate can also be stationary or rotated during processing. Arotating substrate can be rotated continuously or in discreet steps. Forexample, a substrate may be rotated throughout the entire process, orthe substrate can be rotated by a small amount between exposure todifferent reactive or purge gases. Rotating the substrate duringprocessing (either continuously or in steps) may help produce a moreuniform deposition or etch by minimizing the effect of, for example,local variability in gas flow geometries.

FIG. 2 shows a block diagram of a plasma system 800 to perform at leastsome of the method of one or more embodiments. The plasma system 800illustrated has a processing chamber 801. A movable pedestal 802 to holda substrate 803 that has been positioned in processing chamber 801.Pedestal 802 can comprise an electrostatic chuck (“ESC”), a DC electrodeembedded into the ESC, and a cooling/heating base. In an embodiment,pedestal 802 acts as a moving cathode. In an embodiment, the ESCcomprises an Al₂O₃ material, Y₂O₃, or other ceramic materials known toone of ordinary skill of electronic device manufacturing. A DC powersupply 804 can be connected to the DC electrode of the pedestal 802. Insome embodiments, the pedestal 802 includes a heater (not shown) that iscapable of raising the temperature of the substrate to the firsttemperature. While an electrostatic chuck is illustrated as the pedestal802, those skilled in the art will understand that this is merelyexemplary and other pedestal types are within the scope of thedisclosure.

As shown in FIG. 2, a substrate 803 can be loaded through an opening 808and placed on the pedestal 802. Plasma system 800 comprises an inlet toinput one or more process gases 812 through a mass flow controller 811to a plasma source 813. A plasma source 813 comprising a showerhead 814is coupled to the processing chamber 801 to receive one or more processgases 812 to generate plasma. Plasma source 813 is coupled to a RFsource power 810. Plasma source 813 through showerhead 814 generates aplasma 815 in processing chamber 801 from one or more process gases 812using a high frequency electric field. Plasma 815 comprises plasmaparticles, such as ions, electrons, radicals, or any combinationthereof. In an embodiment, power source 810 supplies power from about 50W to about 3000 W at a frequency from about 400 kHz to about 162 MHz togenerate plasma 815.

A plasma bias power 805 is coupled to the pedestal 802 (e.g., cathode)via a RF match 807 to energize the plasma. In an embodiment, the plasmabias power 805 provides a bias power that is not greater than 1000 W ata frequency between about 2 MHz to 60 MHz, and in a particularembodiment at about 13 MHz. A plasma bias power 806 may also beprovided, for example, to provide another bias power that is not greaterthan 1000 W at a frequency from about 400 kHz to about 60 MHz, and in aparticular embodiment, at about 60 MHz. Plasma bias power 806 and plasmabias power 805 are connected lo RF match 807 to provide a dual frequencybias power. In an embodiment, a total bias power applied to the pedestal802 is from about 10 W to about 3000 W.

As shown in FIG. 2, a pressure control system 809 provides a pressure toprocessing chamber 801. The chamber 801 has one or more exhaust outlets816 to evacuate volatile products produced during processing in thechamber. In an embodiment, the plasma system 800 is an inductivelycoupled plasma (ICP) system. In an embodiment, the plasma system 800 isa capacitively coupled plasma (CCP) system.

In some embodiments, a control system 817 is coupled to the processingchamber 801. The control system 817 comprises a processor 818, atemperature controller 819 coupled to the processor 818, a memory 820coupled to the processor 818, and input/output devices 821 coupled tothe processor 818. The memory 820 can include one or more of transitorymemory (e.g., random access memory) and non-transitory memory (e.g.,storage).

The control system 817 can be configured to perform at least some of themethods as described herein and may be either software or hardware or acombination of both. The plasma system 800 may be any type of highperformance processing plasma systems known in the art, such as but notlimited to an etcher, a cleaner, a furnace, or any other plasma systemto manufacture electronic devices.

FIG. 3 illustrates a system 900 that can be used to process a substrateaccording to one or more embodiment of the disclosure. The system 900can be referred to as a cluster tool. The system 900 includes a centraltransfer station 910 with a robot 912 therein. The robot 912 isillustrated as a single blade robot; however, those skilled in the artwill recognize that other robot 912 configurations are within the scopeof the disclosure. The robot 912 is configured to move one or moresubstrate between chambers connected to the central transfer station910.

At least one pre-clean chamber 920 is connected to the central transferstation 910. The pre-clean chamber 920 can include one or more of aheater, a radical source or plasma source. The pre-clean chamber 920 isin fluid communication with an activating agent. An exemplary pre-cleanchamber 920 is illustrated in FIG. 2 as a plasma system 800.

In some embodiments, there are two pre-clean chambers 920 connected tothe central transfer station 910. In the embodiment shown in FIG. 3, thepre-clean chambers 920 can act as pass through chambers between thefactory interface 905 and the central transfer station 910. The factoryinterface 905 can include one or more robot 906 to move substrate from acassette to the pre-clean chamber 920. The robot 912 can them move thesubstrate from the pre-clean chamber 920 to other chambers within thesystem 900.

A deposition chamber 930 can be connected to the central transferstation 910. The deposition chamber 930 comprising a pedestal to hold asubstrate. The deposition chamber 930 is in fluid communication with oneor more reactive gas sources to provide one or more flows of reactivegases to the deposition chamber 930.

The deposition chamber 930 can be any suitable chamber that can providea flow of molecules and control the temperature of the substrate. Theplasma system 800 shown in FIG. 2 can also be used as the depositionchamber 930. The substrate can be moved to and from the depositionchamber 930 by the robot 912 passing through isolation valve 914.

A selective deposition chamber 940 can also be connected to the centraltransfer station 910. The selective deposition chamber 940 can be anysuitable deposition chamber including, but not limited to, CVD, ALD,PECVD, PEALD, or PVD chambers. In some embodiments, the selectivedeposition chamber 940 comprises an ALD chamber. The ALD chamber can bea time-domain chamber where the reactive gases are sequentially exposedto the substrate so that only one reactive gas is present in the chamberat any given time. In some embodiments, the ALD chamber is a spatial ALDchamber with the reactive gases are flowed into separate regions of theprocessing chamber at the same time and the reactive gases are separatedby a gas curtain to prevent gas phase reactions between the reactivegases. In a spatial ALD chamber, the substrate is moved between regionsof the processing chamber containing the various reactive gases todeposit a film.

Other process chambers can be connected to the central transfer station910. In the embodiment shown, an ashing chamber 960 is connected to thecentral transfer station 910 through isolation valve 914. The ashingchamber 960 can be any suitable chamber that can remove the thin filmafter selective deposition.

At least one controller 950 is coupled to the central transfer station910, the pre-clean chamber 920, the deposition chamber 930, theselective deposition chamber 940, or the ashing chamber 960. In someembodiments, there are more than one controller 950 connected to theindividual chambers or stations and a primary control processor iscoupled to each of the separate processors to control the system 900.The controller 950 may be one of any form of general-purpose computerprocessor, microcontroller, microprocessor, etc., that can be used in anindustrial setting for controlling various chambers and sub-processors.

The at least one controller 950 can have a processor 952, a memory 954coupled to the processor 952, input/output devices 956 coupled to theprocessor 952, and support circuits 958 to communication between thedifferent electronic components. The memory 954 can include one or moreof transitory memory (e.g., random access memory) and non-transitorymemory (e.g., storage).

The memory 954, or computer-readable medium, of the processor may be oneor more of readily available memory such as random access memory (RAM),read-only memory (ROM), floppy disk, hard disk, or any other form ofdigital storage, local or remote. The memory 954 can retain aninstruction set that is operable by the processor 952 to controlparameters and components of the system 900. The support circuits 958are coupled to the processor 952 for supporting the processor in aconventional manner. Circuits may include, for example, cache, powersupplies, clock circuits, input/output circuitry, subsystems, and thelike.

Processes may generally be stored in the memory as a software routinethat, when executed by the processor, causes the process chamber toperform processes of the present disclosure. The software routine mayalso be stored and/or executed by a second processor (not shown) that isremotely located from the hardware being controlled by the processor.Some or all of the method of the present disclosure may also beperformed in hardware. As such, the process may be implemented insoftware and executed using a computer system, in hardware as, e.g., anapplication specific integrated circuit or other type of hardwareimplementation, or as a combination of software and hardware. Thesoftware routine, when executed by the processor, transforms the generalpurpose computer into a specific purpose computer (controller) thatcontrols the chamber operation such that the processes are performed.

The use of the terms “a” and “an” and “the” and similar referents in thecontext of describing the materials and methods discussed herein(especially in the context of the following claims) are to be construedto cover both the singular and the plural, unless otherwise indicatedherein or clearly contradicted by context. Recitation of ranges ofvalues herein are merely intended to serve as a shorthand method ofreferring individually to each separate value falling within the range,unless otherwise indicated herein, and each separate value isincorporated into the specification as if it were individually recitedherein. All methods described herein can be performed in any suitableorder unless otherwise indicated herein or otherwise clearlycontradicted by context. The use of any and all examples, or exemplarylanguage (e.g., “such as”) provided herein, is intended merely to betterilluminate the materials and methods and does not pose a limitation onthe scope unless otherwise claimed. No language in the specificationshould be construed as indicating any non-claimed element as essentialto the practice of the disclosed materials and methods.

Reference throughout this specification to “one embodiment,” “certainembodiments,” “one or more embodiments” or “an embodiment” means that aparticular feature, structure, material, or characteristic described inconnection with the embodiment is included in at least one embodiment ofthe disclosure. Thus, the appearances of the phrases such as “in one ormore embodiments,” “in certain embodiments,” “in one embodiment” or “inan embodiment” in various places throughout this specification are notnecessarily referring to the same embodiment of the disclosure.Furthermore, the particular features, structures, materials, orcharacteristics may be combined in any suitable manner in one or moreembodiments.

Although the disclosure herein has been described with reference toparticular embodiments, it is to be understood that these embodimentsare merely illustrative of the principles and applications of thepresent disclosure. It will be apparent to those skilled in the art thatvarious modifications and variations can be made to the method andapparatus of the present disclosure without departing from the spiritand scope of the disclosure. Thus, it is intended that the presentdisclosure include modifications and variations that are within thescope of the appended claims and their equivalents.

What is claimed is:
 1. A method of forming a contact, the methodcomprising: forming at least one gate stack over an active region on asubstrate, the at least one gate stack having a first side and a secondside and comprising a gate and a gate cap comprising a first material,the substrate having a spacer material adjacent the first side and thesecond side of the at least one gate stack, a source material with asource cap comprising a second material on an opposite side of thespacer material adjacent the first side of the at least one gate stack,a drain material with a drain cap comprising the second material on anopposite side of the spacer material adjacent the second side of the atleast one gate stack; forming an interlayer dielectric (ILD) comprisingthe second material on the gate cap, spacer material, source cap, anddrain cap, and a first mask layer on the interlayer dielectric (ILD),the interlayer dielectric (ILD) and the first mask layer having at leastone opening exposing a surface of the gate cap, a surface of the spacermaterial, a surface of the source material, and a surface of the drainmaterial; selectively etching one of the source cap or the drain capthrough the at least one opening to expose one of a surface of thesource material or a surface of the drain material; selectivelydepositing a fill material on one of the exposed surface of the sourcematerial or the exposed surface of the drain material, the fill materialhaving a top surface substantially coplanar with a top surface of thespacer material and with a top surface of the drain cap or a top surfaceof the source cap; removing the gate cap to expose a surface of thegate; forming a gate contact on one of the surface of the gate, thesurface of the source material, or the surface of the drain material;and forming a source/drain contact on one or more of the surface of thegate material, the surface of the drain material, the surface of thespacer material, or the surface of the gate cap.
 2. The method of claim1, wherein the fill material is selected from one or more of hafniumoxide, zirconium oxide, aluminum oxide, silicon oxide, silicon nitride,or the like.
 3. The method of claim 1, wherein the gate comprises ametal selected from one or more of cobalt, tungsten, titanium,molybdenum, nickel, ruthenium, silver, iridium, or platinum.
 4. Themethod of claim 1, wherein the first material comprises one or more ofsilicon carbide, tungsten oxide, tungsten carbide, silicon nitride,aluminum oxide, or zirconium oxide.
 5. The method of claim 1, whereinthe spacer material comprises a low-κ dielectric.
 6. The method of claim5, wherein the low-κ dielectric comprises one or more of siliconoxycarbide, silicon oxynitride, silicon carbonitride, or siliconoxycarbonitride.
 7. The method of claim 1, wherein the second materialcomprises one or more of silicon nitride, silicon oxynitride, or siliconoxide.
 8. The method of claim 1, wherein the first mask layer comprisesa third material selected from one or more of a spin-on carbon,hardmask, or a photoresist.
 9. The method of claim 1, wherein the gatecontact and the source/drain contact independently comprises one or moreof copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), tantalum (Ta),molybdenum (Mo), nickel (Ni), ruthenium (Ru), silver (Ag), gold (Au),iridium (Ir), or platinum (Pt).
 10. A method of forming a contact, themethod comprising: forming at least one gate stack over an active regionon a substrate, the at least one gate stack having a first side and asecond side and comprising a gate and a gate cap comprising a firstmaterial, the substrate having a spacer material adjacent the first sideand the second side of the at least one gate stack, a source materialwith a source cap comprising a second material on an opposite side ofthe spacer material adjacent the first side of the at least one gatestack, a drain material with a drain cap comprising the second materialon an opposite side of the spacer material adjacent the second side ofthe at least one gate stack; forming an interlayer dielectric (ILD)comprising the second material on the gate cap, spacer material, sourcecap, and drain cap; forming a first mask layer on the interlayerdielectric (ILD), the interlayer dielectric (ILD) and the first masklayer having at least one opening; selectively etching one of the sourcecap or the drain cap through the at least one opening to expose one of asurface of the source material or a surface of the drain material;selectively depositing a fill material on one of the exposed surface ofthe source material or the exposed surface of the drain material, thefill material having a top surface substantially coplanar with a topsurface of the spacer material and with a top surface of the drain capor a top surface of the source cap; removing the gate cap to expose asurface of the gate; and forming a gate contact on the surface of thegate.
 11. The method of claim 10, wherein the fill material is selectedfrom one or more of hafnium oxide, zirconium oxide, aluminum oxide,silicon oxide, silicon nitride, or the like.
 12. The method of claim 10,wherein the gate comprises a metal selected from one or more of cobalt,tungsten, titanium, molybdenum, nickel, ruthenium, silver, iridium, orplatinum.
 13. The method of claim 10, wherein the first materialcomprises one or more of silicon carbide, tungsten oxide, tungstencarbide, silicon nitride, aluminum oxide, or zirconium oxide.
 14. Themethod of claim 10, wherein the spacer material comprises a low-κdielectric.
 15. The method of claim 10, wherein the second materialcomprises one or more of silicon nitride, silicon oxynitride, or siliconoxide.
 16. The method of claim 10, wherein the first mask layercomprises a third material selected from one or more of a spin-oncarbon, hardmask, or a photoresist.
 17. The method of claim 10, whereinthe gate contact comprises one or more of copper (Cu), cobalt (Co),tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel(Ni), ruthenium (Ru), silver (Ag), gold (Au), iridium (Jr), or platinum(Pt).